基于Balun的变压器共模隔离分析

Graciele Batistell, Sina Mortezazadeh Mahani, Suchendranath Popuri, Ajinkya Kale, J. Sturm, W. Bösch
{"title":"基于Balun的变压器共模隔离分析","authors":"Graciele Batistell, Sina Mortezazadeh Mahani, Suchendranath Popuri, Ajinkya Kale, J. Sturm, W. Bösch","doi":"10.1109/Austrochip.2019.00024","DOIUrl":null,"url":null,"abstract":"This paper presents the circuit analysis of a transformer based balun with emphasis on the improvement of Common-Mode Isolation (CMI). Critical parameters are identified based on the initial analysis of the transformer equivalent circuit. Additionally, the influence of the transformers load impedance and the use of Center-Tap (CT) on CMI enhancement are presented. EM simulations of two transformers, a stacked and an interleaved version, designed in 65 nm CMOS technology are presented. The CMI performance of both the transformers is compared to the proposed circuit model and the effect of layout and geometry is also analyzed. Finally, guidelines are presented for the design of transformer based baluns with improved CMI performance.","PeriodicalId":6724,"journal":{"name":"2019 Austrochip Workshop on Microelectronics (Austrochip)","volume":"154 1","pages":"71-75"},"PeriodicalIF":0.0000,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Analysis of Common-Mode Isolation on Transformer Based Balun\",\"authors\":\"Graciele Batistell, Sina Mortezazadeh Mahani, Suchendranath Popuri, Ajinkya Kale, J. Sturm, W. Bösch\",\"doi\":\"10.1109/Austrochip.2019.00024\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the circuit analysis of a transformer based balun with emphasis on the improvement of Common-Mode Isolation (CMI). Critical parameters are identified based on the initial analysis of the transformer equivalent circuit. Additionally, the influence of the transformers load impedance and the use of Center-Tap (CT) on CMI enhancement are presented. EM simulations of two transformers, a stacked and an interleaved version, designed in 65 nm CMOS technology are presented. The CMI performance of both the transformers is compared to the proposed circuit model and the effect of layout and geometry is also analyzed. Finally, guidelines are presented for the design of transformer based baluns with improved CMI performance.\",\"PeriodicalId\":6724,\"journal\":{\"name\":\"2019 Austrochip Workshop on Microelectronics (Austrochip)\",\"volume\":\"154 1\",\"pages\":\"71-75\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 Austrochip Workshop on Microelectronics (Austrochip)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/Austrochip.2019.00024\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 Austrochip Workshop on Microelectronics (Austrochip)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/Austrochip.2019.00024","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

本文介绍了一种基于平衡器的变压器的电路分析,重点介绍了其共模隔离性能的改进。在对变压器等效电路进行初步分析的基础上,确定了关键参数。此外,还讨论了变压器负载阻抗和中心抽头(CT)的使用对CMI增强的影响。介绍了采用65纳米CMOS技术设计的堆叠型和交错型变压器的电磁仿真。将两种变压器的CMI性能与所提出的电路模型进行了比较,并分析了布局和几何形状的影响。最后,提出了改进CMI性能的基于变压器的平衡器的设计准则。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Analysis of Common-Mode Isolation on Transformer Based Balun
This paper presents the circuit analysis of a transformer based balun with emphasis on the improvement of Common-Mode Isolation (CMI). Critical parameters are identified based on the initial analysis of the transformer equivalent circuit. Additionally, the influence of the transformers load impedance and the use of Center-Tap (CT) on CMI enhancement are presented. EM simulations of two transformers, a stacked and an interleaved version, designed in 65 nm CMOS technology are presented. The CMI performance of both the transformers is compared to the proposed circuit model and the effect of layout and geometry is also analyzed. Finally, guidelines are presented for the design of transformer based baluns with improved CMI performance.
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