Vijaya Jadkar, Amit Pawbake, A. Jadhavar, R. Waykar, Subhash M. Pandharkar, Ajinkya Bhorde, R. Aher, Shruthi Nair, Bharat B. Gabhale, A. Waghmare, Dhirsing Naik, Priti Vairale, S. Gosavi, S. Jadkar
{"title":"热丝法生长的Nc-Si:H薄膜光电探测器的优异响应和恢复时间","authors":"Vijaya Jadkar, Amit Pawbake, A. Jadhavar, R. Waykar, Subhash M. Pandharkar, Ajinkya Bhorde, R. Aher, Shruthi Nair, Bharat B. Gabhale, A. Waghmare, Dhirsing Naik, Priti Vairale, S. Gosavi, S. Jadkar","doi":"10.30919/esmm5f236","DOIUrl":null,"url":null,"abstract":"In present study we have synthesized highly crystalline hydrogenated nanocrystalline silicon (nc-Si:H) thin films by hot wire method. The obtained thin films were characterized by using low angle-XRD, Raman spectroscopy, non-contact atomic force microscopy (NC-AFM) and UV-Visible spectroscopy. The low angle-XRD analysis revealed that the obtained nc-Si:H thin films are polycrystalline and have preferred orientation along (111) direction. Formation of nc-Si:H films are further confirmed by Raman spectroscopy analysis. The UV-Visible spectroscopy analysis showed that the synthesized films have sharp absorption edge in visible region and has direct band gap of 1. 94 eV. Finally, nc-Si:H based photo-detector have been prepared at optimized process parameters which show an excellent response time (1.79 s) and","PeriodicalId":11851,"journal":{"name":"ES Materials & Manufacturing","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2019-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Excellent Response and Recovery Time of Photo-Detectors Based on Nc-Si:H Films Grown by Using Hot Wire Method\",\"authors\":\"Vijaya Jadkar, Amit Pawbake, A. Jadhavar, R. Waykar, Subhash M. Pandharkar, Ajinkya Bhorde, R. Aher, Shruthi Nair, Bharat B. Gabhale, A. Waghmare, Dhirsing Naik, Priti Vairale, S. Gosavi, S. Jadkar\",\"doi\":\"10.30919/esmm5f236\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In present study we have synthesized highly crystalline hydrogenated nanocrystalline silicon (nc-Si:H) thin films by hot wire method. The obtained thin films were characterized by using low angle-XRD, Raman spectroscopy, non-contact atomic force microscopy (NC-AFM) and UV-Visible spectroscopy. The low angle-XRD analysis revealed that the obtained nc-Si:H thin films are polycrystalline and have preferred orientation along (111) direction. Formation of nc-Si:H films are further confirmed by Raman spectroscopy analysis. The UV-Visible spectroscopy analysis showed that the synthesized films have sharp absorption edge in visible region and has direct band gap of 1. 94 eV. Finally, nc-Si:H based photo-detector have been prepared at optimized process parameters which show an excellent response time (1.79 s) and\",\"PeriodicalId\":11851,\"journal\":{\"name\":\"ES Materials & Manufacturing\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-09-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ES Materials & Manufacturing\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.30919/esmm5f236\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ES Materials & Manufacturing","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.30919/esmm5f236","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
摘要
本研究采用热丝法合成了高结晶氢化纳米硅(nc-Si:H)薄膜。采用低角xrd、拉曼光谱、非接触原子力显微镜(NC-AFM)和紫外-可见光谱对薄膜进行了表征。低角xrd分析表明，制备的nc-Si:H薄膜是多晶的，具有沿(111)方向的择优取向。通过拉曼光谱分析进一步证实了nc-Si:H薄膜的形成。紫外可见光谱分析表明，合成膜在可见光区有明显的吸收边，直接带隙为1。94 eV。最后，在优化的工艺参数下制备了基于nc-Si:H的光电探测器，其响应时间为1.79 s
Excellent Response and Recovery Time of Photo-Detectors Based on Nc-Si:H Films Grown by Using Hot Wire Method
In present study we have synthesized highly crystalline hydrogenated nanocrystalline silicon (nc-Si:H) thin films by hot wire method. The obtained thin films were characterized by using low angle-XRD, Raman spectroscopy, non-contact atomic force microscopy (NC-AFM) and UV-Visible spectroscopy. The low angle-XRD analysis revealed that the obtained nc-Si:H thin films are polycrystalline and have preferred orientation along (111) direction. Formation of nc-Si:H films are further confirmed by Raman spectroscopy analysis. The UV-Visible spectroscopy analysis showed that the synthesized films have sharp absorption edge in visible region and has direct band gap of 1. 94 eV. Finally, nc-Si:H based photo-detector have been prepared at optimized process parameters which show an excellent response time (1.79 s) and
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
