{"title":"弹道双栅器件性能改进及设计权衡","authors":"R. Gusmeroli, A. Spinelli","doi":"10.1109/ESIME.2006.1643986","DOIUrl":null,"url":null,"abstract":"We performed 2D quantum-mechanical simulations of double-gate devices with drift-diffusion and ballistic transport models, investigating the performance improvement that may derive from a scattering-free transport. Device performance and trade-offs are analyzed for channel length from 30 to 8 nm","PeriodicalId":60796,"journal":{"name":"微纳电子与智能制造","volume":"6 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2006-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Performance Improvement of Ballistic Double-Gate Devices and Design Trade-Offs\",\"authors\":\"R. Gusmeroli, A. Spinelli\",\"doi\":\"10.1109/ESIME.2006.1643986\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We performed 2D quantum-mechanical simulations of double-gate devices with drift-diffusion and ballistic transport models, investigating the performance improvement that may derive from a scattering-free transport. Device performance and trade-offs are analyzed for channel length from 30 to 8 nm\",\"PeriodicalId\":60796,\"journal\":{\"name\":\"微纳电子与智能制造\",\"volume\":\"6 1\",\"pages\":\"1-4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-04-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"微纳电子与智能制造\",\"FirstCategoryId\":\"1087\",\"ListUrlMain\":\"https://doi.org/10.1109/ESIME.2006.1643986\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"微纳电子与智能制造","FirstCategoryId":"1087","ListUrlMain":"https://doi.org/10.1109/ESIME.2006.1643986","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Performance Improvement of Ballistic Double-Gate Devices and Design Trade-Offs
We performed 2D quantum-mechanical simulations of double-gate devices with drift-diffusion and ballistic transport models, investigating the performance improvement that may derive from a scattering-free transport. Device performance and trade-offs are analyzed for channel length from 30 to 8 nm
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