HF-VHF-UHF IQ混频器与单个SPDT开关

R. Campbell
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引用次数: 3

摘要

描述了一种使用无源元件和单SPDT开关的I Q混频器拓扑,并在7 MHz和144 MHz进行了仿真和测量。测试夹具允许用各种各样的候选开关进行实验。给出了使用肖特基二极管混合线圈和环的MOSFET开关和SPDT开关的结果。SSB转换损耗接近6db。测量的IIP3为+16 dBm的MOSFET开关和+6 dBm的二极管。肖特基版本在I和Q端口之间的振幅和相位差表现出更好的二阶性能和稳定性。在甚高频使用表面贴装元件的结果表明,肖特基二极管/混合线圈开关是低功率近零中频应用的有希望的候选者。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
HF-VHF-UHF IQ mixer with a single SPDT switch
An I Q mixer topology using passive components and a single SPDT switch is described with simulations and measurements at 7 MHz and 144 MHz. A test fixture permits experiments with a variety of switch candidates. Results are presented for MOSFET switches and an SPDT switch using a hybrid coil and ring of Schottky diodes. SSB conversion loss is near 6 dB. Measured IIP3 is +16 dBm for a MOSFET switch and +6 dBm for the diodes. The Schottky version exhibits much better 2nd order performance and stability of amplitude and phase differences between I and Q ports. Results at VHF using surface mount components suggest that the Schottky diode/hybrid coil switch is a promising candidate for low power near-zero IF applications.
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