128× 128像素4 kfps 14位数字像素PbSe-CMOS非冷却MWIR成像仪

R. Figueras, J. M. Margarit, G. Vergara, V. Villamayor, R. Gutiérrez-Álvarez, C. Fernández-Montojo, L. Terés, F. Serra-Graells
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引用次数: 1

摘要

本文提出了一种128 × 128像素的高速PbSe-CMOS非冷却MWIR成像仪,具有像素数字输出。所提出的基于集成与发射调制的像素内A/D转换器由于其软复位机制,即使在20 Meps下也能获得良好的线性度。提出了ab类CMOS电路,使静态功耗低于10 μW/pix。每个DPS单元还包括其自己的模拟参考和偏置发生器。由此产生的像素数字I/O接口确保了FPA级的低串扰。从布局后的模拟结果来看,成像仪能够提供14位高达1 kfps或4 kfps高达10位。该MWIR成像仪目前正集成在X-FAB的0.18 μm 1P6M CMOS技术中。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 128× 128-pix 4-kfps 14-bit Digital-Pixel PbSe-CMOS Uncooled MWIR Imager
This paper presents a 128 × 128-pix high-speed PbSe-CMOS uncooled MWIR imager with pixel digital output. The proposed in-pixel A/D converter based on integrate-and-fire modulation achieves good linearity even at 20 Meps thanks to its soft-reset mechanism. Class-AB CMOS circuits are proposed to keep static power consumption below 10 μW/pix. Each DPS cell also includes its own analog reference and bias generator. The resulting pixel digital-only I/O interface ensures low crosstalk at the FPA level. From post-layout simulation results, the imager is capable of delivering 14 bit up to 1 kfps or alternatively 4 kfps up to 10 bit. The presented MWIR imager is currently being integrated in the 0.18-μm 1P6M CMOS technology from X-FAB.
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