硅光电器件的发光机理

Hieu T. Nguyen, D E Macdonald
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引用次数: 0

摘要

测量的发光光谱是发生在硅片和测量设备中的许多现象的复杂组合。发射光谱本身是由硅的固有特性、基体材料中的缺陷和杂质、实验条件和表面光学决定的。然后,被检测的光谱受到发光光谱/成像系统的光谱响应的影响。然而,通过系统地控制和监测可能影响检测光谱的参数,可以评估硅片和太阳能电池的某些特性。本文综述了硅片和太阳能电池中发光现象的一些基本机理。这对于理解捕获的PL光谱中嵌入的丰富信息至关重要,基于这些信息可以建立硅光伏中的各种应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Mechanisms of luminescence in silicon photovoltaics
A measured luminescence spectrum is a complex combination of numerous phenomena occurring in both silicon wafers and measurement equipment. The emitted spectrum itself is determined by the intrinsic properties of silicon, defects and impurities in the host material, experimental conditions, and surface optics. The detected spectrum is then affected by the spectral responses of the luminescence spectroscopy/imaging system. However, by systematically controlling and monitoring the parameters which can potentially affect the detected spectra, certain properties of silicon wafers and solar cells can be evaluated. This paper reviews some basic mechanisms of luminescence phenomena in silicon wafers and solar cells. This is essential for understanding the rich information embedded in the captured PL spectra, based on which various applications in silicon photovoltaics can be established.
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