Byunghak Lee, Sangcheol Kim, Dong-chan Kim, Taewoo Kim, Jungyeol Park, Youngho Choe, Y. Woo, E. Ryou, Jongoh Kim, J. Om
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The effects of post annealing on oxide-charge-to-breakdown and interface state in tungsten polycide gate
The dependence of oxide charge-to-breakdown (Q/sub BD/) and device degradation on the combined post annealing of RTA and FA in the tungsten polycide gate technology have been experimentally investigated. The experimental results suggest that Q/sub BD/ and degradation are improved by lower temperature and shorter time of RTA. Whereas the FA/RTA annealing sequence is more advantageous for improving Q/sub BD/, the RTA/FA annealing sequence is good for improving device degradation.
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