{"title":"三角形间隔双栅无结场效应晶体管的电学特性研究","authors":"Anjanmani Baro, Kaushik Chandra Deva Sarma","doi":"10.1109/ComPE49325.2020.9200147","DOIUrl":null,"url":null,"abstract":"A simulation study on electrical characteristics of a Double gate Junctionless field effect transistor (JLFET) with triangle shaped spacer is reported. The structure consists of a spacer of the shape of a triangle extended upto the source and drain ohmic contacts. A simulation study on electrical performance has been done in COGENDA VisualTCAD 2-D Device Simulator 1.8.2 platform. The study shows that the use of spacer in triangle shape enhances Ion/Ioff ratio and subthreshold slope compared to a conventional JLFET.","PeriodicalId":6804,"journal":{"name":"2020 International Conference on Computational Performance Evaluation (ComPE)","volume":"143 1","pages":"601-603"},"PeriodicalIF":0.0000,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Study on Electrical Characteristics of Double gate Junctionless Field Effect Transistor With Triangle Shaped Spacer\",\"authors\":\"Anjanmani Baro, Kaushik Chandra Deva Sarma\",\"doi\":\"10.1109/ComPE49325.2020.9200147\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A simulation study on electrical characteristics of a Double gate Junctionless field effect transistor (JLFET) with triangle shaped spacer is reported. The structure consists of a spacer of the shape of a triangle extended upto the source and drain ohmic contacts. A simulation study on electrical performance has been done in COGENDA VisualTCAD 2-D Device Simulator 1.8.2 platform. The study shows that the use of spacer in triangle shape enhances Ion/Ioff ratio and subthreshold slope compared to a conventional JLFET.\",\"PeriodicalId\":6804,\"journal\":{\"name\":\"2020 International Conference on Computational Performance Evaluation (ComPE)\",\"volume\":\"143 1\",\"pages\":\"601-603\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 International Conference on Computational Performance Evaluation (ComPE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ComPE49325.2020.9200147\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 International Conference on Computational Performance Evaluation (ComPE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ComPE49325.2020.9200147","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Study on Electrical Characteristics of Double gate Junctionless Field Effect Transistor With Triangle Shaped Spacer
A simulation study on electrical characteristics of a Double gate Junctionless field effect transistor (JLFET) with triangle shaped spacer is reported. The structure consists of a spacer of the shape of a triangle extended upto the source and drain ohmic contacts. A simulation study on electrical performance has been done in COGENDA VisualTCAD 2-D Device Simulator 1.8.2 platform. The study shows that the use of spacer in triangle shape enhances Ion/Ioff ratio and subthreshold slope compared to a conventional JLFET.
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