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引用次数: 4
摘要
提出了研究半导体近表面载流子迁移率的声学方法。在该方法中，测量了横向声电压与吸收的表面声波功率的关系，以无损地确定载流子的迁移率。在压电半导体层状结构中，根据场效应可以确定多数载流子和少数载流子的迁移率。单GaP:Te(110)晶体在经过各种表面处理后进行了研究。载流子迁移率值在75 ~ 120 (cm 2 / V s)之间，TAV法测定的结果与霍尔测量的结果吻合较好。
The acoustic method of investigating the electrical carrier mobility of the real GaP:Te (110) surface$^*$
The acoustic method of investigating the carrier mobility in the near-surface region of a semiconductor is presented. In this method the transverse acoustoelectric voltage versus the absorbed surface acoustic wave power was measured to determine nondestructively the carrier mobilites. In the layered structure: piezoelectric - semiconductor, the majority and minority carrier mobilities can be determined basing on the field effect. Single GaP:Te( 110) crystals have been investigated after various kinds pf surface treatment. The carrier mobility values range from 75 to 120 (cm 2 / V s). The results determined by means of the TAV method are in satisfactory agreement with the results obtained by Hall measurements.
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