掺银In2S3薄膜的表征

IF 0.9 4区物理与天体物理 Q4 PHYSICS, APPLIED

European Physical Journal-applied Physics Pub Date : 2020-12-01 DOI:10.1051/epjap/2020200274

S. M. Bazarchi, P. Esmaili, S. Asgary

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引用次数: 10

摘要

采用化学浴沉积法在玻璃衬底上沉积了不同[Ag/In]摩尔比浓度(0、0.9、1.0、1.1)的掺银硫化铟薄膜。采用XRD、EDAX、SEM、AFM、分光光度计和霍尔测量系统对其结构、形貌、光学和电学性质进行了表征。采用Kramers-Kronig法计算了薄膜的光学常数。研究发现，银可以改变硫化铟薄膜的物理性质，这取决于银的浓度。XRD结果表明，Ag浓度的掺入并没有改变In2S3的结构。掺杂薄膜表面粗糙。随着[Ag/In]摩尔比的增加，电导率增加，光学直接带隙能量从2.75 eV降低到2.38 eV。

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Characterization of silver doped In2S3 films

Silver doped Indium sulphide thin films with different [Ag/In] molar ratio concentrations (0, 0.9, 1.0, 1.1) were deposited on glass substrates using chemical bath deposition method. The structural, morphological, optical and electrical properties are characterized using XRD, EDAX, SEM, AFM, spectrophotometer and Hall measurement system, respectively. Kramers-Kronig method was used to obtain optical constants of the films. It is found that Ag can change physical properties of Indium sulfide thin films, depending on the Ag concentration. XRD results show the incorporation of Ag concentration did not change the structure of In2S3. Doped films had rough surfaces. As the [Ag/In] molar ratio increased, conductivity increases and optical direct band gap energy decreases from 2.75 to 2.38 eV.

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来源期刊

European Physical Journal-applied Physics 物理-物理：应用

CiteScore

1.90

自引率

10.00%

发文量

审稿时长

1.9 months

期刊介绍： EPJ AP an international journal devoted to the promotion of the recent progresses in all fields of applied physics. The articles published in EPJ AP span the whole spectrum of applied physics research.