光晕nMOSFET的特性取决于栅极轮廓

ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361) Pub Date : 1999-10-26 DOI:10.1109/ICVC.1999.820977

Jae-Hyung Kim, J. Choy, Doohee Song, Youngjong Lee, Kyungho Lee

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引用次数: 0

摘要

研究了由邻近效应引起的桶型浇口型装置特性。我们表明，由于LDD区域和栅极电极之间的偏移区域，可能会导致热载子退化增强，并且栅极与漏极重叠电容可能会减少。最后，我们推荐了一种测量栅极线宽度(CD，临界尺寸)的方法，以更精确地期望器件特性。

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The halo nMOSFET characteristics dependent on the gate profile

Device characteristics with a barrel-type gate profile caused by the proximity effect were investigated. We show that enhanced hot carrier degradation may result and a decrease of the gate to drain overlap capacitance may occur because of the offset region between the LDD region and the gate electrode. Finally we have recommended a method of measuring gate line width (CD, Critical Dimension) for more precise expectations of the device characteristics.

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ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)

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