面向目标溅射和常规溅射生长Co/Pt多层膜中垂直磁各向异性的调节

O. Yıldırım, M. Marioni, C. Falub, H. Rohrmann, D. Jaeger, Marco Rechsteiner, D. Schneider, H. Hug
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引用次数: 4

摘要

通过对钴层生长过程中的溅射电压进行控制,对[Co(0.4 nm)/Pt(0.7 nm)]5多层膜的磁性进行了调整。结果表明,当溅射电压达到150 V时,晶体结构得到改善,磁各向异性和面外矫顽场增大。然而,在较高的阴极电压(540 V)下,晶体织构质量略有恶化,这伴随着有效各向异性的降低。利用面向目标阴极溅射,多层材料的晶体结构可以在不进行任何热处理的情况下控制,这可以用于优化特定应用的Co/Pt多层材料的磁性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Tuning the Perpendicular Magnetic Anisotropy in Co/Pt Multilayers Grown by Facing Target Sputtering and Conventional Sputtering
Magnetic properties of [Co(0.4 nm)/Pt(0.7 nm)]5 multilayers are tailored by controlling the sputtering voltage during the growth of cobalt layers by a facing target cathode. It is shown that increasing sputtering voltage up to 150 V leads to an improved crystalline texture and this results in larger magnetic anisotropies and out-of-plane coercive fields. At a higher cathode voltage of 540 V however crystalline texture quality slightly worsens and this is accompanied by a decrease in the effective anisotropy. Using facing target cathode sputtering, the crystalline structure of the multilayers can be controlled without applying any heat treatment and this can be used to optimize the magnetic properties of Co/Pt multilayers for specific applications.
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