Андрей Валентинович Колчин, С.В. Заботнов, Д.В. Шулейко, П. И. Лазаренко, В.Б. Глухенькая, С. А. Козюхин, П. К. Кашкаров
{"title":"Кинетика обратимых фазовых переходов в тонких пленках Ge-=SUB=-2-=/SUB=-Sb-=SUB=-2-=/SUB=-Te-=SUB=-5-=/SUB=- при фемтосекундном лазерном облучении","authors":"Андрей Валентинович Колчин, С.В. Заботнов, Д.В. Шулейко, П. И. Лазаренко, В.Б. Глухенькая, С. А. Козюхин, П. К. Кашкаров","doi":"10.21883/os.2023.02.54996.10-23","DOIUrl":null,"url":null,"abstract":"Femtosecond laser irradiation of amorphous Ge2Sb2Te5 thin films initiates reversible phase transitions. The amorphization and crystallization of Ge2Sb2Te5 thin films were experimentally and theoretically confirmed. Electron and lattice temperatures kinetics during laser pulse duration were evaluated by two-temperature models calculations and experimental data. The dynamical changing of optical properties have been taking into account. Temperatures and cooling rates, which are necessary to initiate phase transitions by IR laser pulses with subpicosecond duration. The observed results open perspectives for improvement of Ge2Sb2Te5 nanophotonical devices.","PeriodicalId":24059,"journal":{"name":"Оптика и спектроскопия","volume":"24 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Оптика и спектроскопия","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.21883/os.2023.02.54996.10-23","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Кинетика обратимых фазовых переходов в тонких пленках Ge-=SUB=-2-=/SUB=-Sb-=SUB=-2-=/SUB=-Te-=SUB=-5-=/SUB=- при фемтосекундном лазерном облучении
Femtosecond laser irradiation of amorphous Ge2Sb2Te5 thin films initiates reversible phase transitions. The amorphization and crystallization of Ge2Sb2Te5 thin films were experimentally and theoretically confirmed. Electron and lattice temperatures kinetics during laser pulse duration were evaluated by two-temperature models calculations and experimental data. The dynamical changing of optical properties have been taking into account. Temperatures and cooling rates, which are necessary to initiate phase transitions by IR laser pulses with subpicosecond duration. The observed results open perspectives for improvement of Ge2Sb2Te5 nanophotonical devices.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
