Mechanism of reaction of silica and carbon for producing silicon carbide

The reaction kinetics of carbon reduction of silica were investigated using thermodynamic concepts and by fitting to relevant models the experimental data obtained for this reduction using a thermogravimetric unit in the temperature range of 1566 to 1933 K. The results show that the only way to produce SiC in this reduction is the reaction of Si, SiO, or SiO2 at the surface or by diffusion of SiO inside the carbon particles while CO and CO2 have no direct effect on the process. The controlling step of this reduction at temperatures lower than 1750 K is the chemical gas–solid or solid–solid reaction at the surface of the carbon particles, while at higher temperatures, the rate of SiO diffusing inside the carbon particles controls the rate of this reduction.