不同p漂量下p-DDDMOS晶体管的热载流子降解机理

2011 IEEE International Conference of Electron Devices and Solid-State Circuits Pub Date : 2011-12-29 DOI:10.1109/EDSSC.2011.6117684

Siyang Liu, Weifeng Sun, Weijun Wan, Qinsong Qian, Hu Sun

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引用次数: 3

摘要

研究了不同p漂移剂量下p型双扩散漏极MOS (p-DDDMOS)晶体管的热载子诱导降解。根据实验数据和T-CAD模拟，在通道附近的p漂移区发现了热电子注入氧化物，导致导通电阻(Ron)降低，但在通道区域未观察到热载子退化。实验结果还表明，较高的p漂剂量会导致更多的热电子注入和捕获，从而导致更严重的降解。

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The hot-carrier degradation mechanism of p-DDDMOS transistor with different p-drift dosage

Hot-carrier-induced degradation in the p-type double diffusion drain MOS (p-DDDMOS) transistor with different p-drift dosage is investigated. Basing on the experimental data and T-CAD simulations, hot-electron injection into the oxide of the p-drift region near the channel has been found, leading to the on-resistance (Ron) decrease, however, no hot-carrier degradation is observed in the channel region. The experimental results also show that higher p-drift dosage will result in much more serious degradation due to much more hot electron injection and trapping.

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2011 IEEE International Conference of Electron Devices and Solid-State Circuits

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