基于电子发射的太赫兹场探测器

2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS) Pub Date : 2015-06-21 DOI:10.1109/TRANSDUCERS.2015.7181368

X. Zhao, J. Zhang, K. Fan, H. Seren, R. Averitt, Xin Zhang

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引用次数: 1

摘要

本文报道了在强太赫兹(THz)脉冲作用下，电场在超材料结构的容性间隙中诱导电子发射。在氮化硅薄膜上制备的金超材料可以在共振频率附近大大增强电场，当入射电场> 60kV/cm时，导致太赫兹场诱导的电子发射穿过超材料结构的容性间隙。实验测量了发射电流，显示出与入射场强强度的依赖关系，可以用作太赫兹探测器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Terahertz field detector based on electron emission

This paper reports the electric field induced electron emission across the capacitive gap in a metamaterial structure under intense terahertz (THz) pulses. The gold metamaterial fabricated on a silicon nitride thin film can enhance the electric field greatly around the resonance frequency, resulting in THz field induced electron emission across the capacitive gap in the metamaterial structure when the incident electric field is > 60kV/cm. The emission current is measured experimentally and shows dependency on the strength of the incident field strength, which can be used as a THz detector.

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2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)

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