一种用于x波段多功能芯片的使用SiGe HBTs的890 mW堆叠功率放大器

ESSCIRC Conference 2015 - 41st European Solid-State Circuits Conference (ESSCIRC) Pub Date : 2015-11-02 DOI:10.1109/ESSCIRC.2015.7313830

Chao Liu, Qiang Li, Yihu Li, Xiang Li, Haitao Liu, Y. Xiong

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引用次数: 15

摘要

提出了一种基于0.13 μm SiGe hbt的x波段多功能芯片堆叠功率放大器(PA)。为了获得高输出功率，两个具有最佳级间匹配网络的5堆叠PAs与威尔金森功率合成器相结合。此外，采用三叠放大器作为驱动放大器，提高了整个放大器的增益。在片上测量期间，x波段堆叠式PA的峰值输出功率为890 mW，最大功率附加效率(PAE)为17.8%。芯片面积为1.9 × 1.4 mm2，包括测试垫。据作者所知，我们提出的PA通过硅基技术在x波段实现了最高输出功率。

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An 890 mW stacked power amplifier using SiGe HBTs for X-band multifunctional chips

This paper presents a stacked power amplifier (PA) for X-band multifunctional chips using 0.13-μm SiGe HBTs. To achieve high output power, two 5-stacked PAs with optimum inter-stage matching networks are combined with Wilkinson power combiners. Furthermore, a 3-stacked amplifier is used as the driving amplifier to increase the gain of the whole PA. During on-chip measurements, the X-band stacked PA achieves peak output power of 890 mW and maximum power added efficiency (PAE) of 17.8 %. The chip area is 1.9 × 1.4 mm2 including the testing pads. To the authors' knowledge, our proposed PA achieves the highest output power at X-band with a silicon-based technology.

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ESSCIRC Conference 2015 - 41st European Solid-State Circuits Conference (ESSCIRC)

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