充电伤害和SOI

2021 International Conference on IC Design and Technology (ICICDT) Pub Date : 2005-05-09 DOI:10.1109/ICICDT.2005.1502599

T. Hook

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引用次数: 0

摘要

SOI技术在当今的硅光谱中提供了最高的性能，并用于最快的处理器要求。除了可以实现高速度外，该技术还具有不同寻常的高稳健性，可以抵抗在线充电损坏。本文综述了有关SOI充电抗扰度和设计规则的相关数据和理论。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Charging damage and SOI

SOI technologies offer the highest possible performance in today's silicon spectrum, and are used for the very fastest processor requirements. In addition to the high speed achievable with this technology, there is also unusually high robustness against inline charging damage. In this paper, we review data and theories pertinent to SOI charging immunity and design rules.

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来源期刊

2021 International Conference on IC Design and Technology (ICICDT)

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