{"title":"包围通道无结场效应晶体管","authors":"N. Das, Kaushik Chandra Deva Sarma","doi":"10.1109/ComPE49325.2020.9200095","DOIUrl":null,"url":null,"abstract":"This paper presents the surrounded channel Junctionless field effect transistor (SCJLFET) concept. A study on electrical characteristics of a SCJLFET is also presented. The gate is placed inside the body of the device. In other words the gate is surrounded by the channel region. A simulation study on electrical performance of SCJLFET has been done in TCAD. The study shows that SCJLFET exhibits comparatively higher Ion/Ioff ratio, lower subthreshold swing and higher threshold voltage than a conventional JLFET.","PeriodicalId":6804,"journal":{"name":"2020 International Conference on Computational Performance Evaluation (ComPE)","volume":"69 1","pages":"608-610"},"PeriodicalIF":0.0000,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Surrounded Channel Junctionless Field Effect Transistor\",\"authors\":\"N. Das, Kaushik Chandra Deva Sarma\",\"doi\":\"10.1109/ComPE49325.2020.9200095\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the surrounded channel Junctionless field effect transistor (SCJLFET) concept. A study on electrical characteristics of a SCJLFET is also presented. The gate is placed inside the body of the device. In other words the gate is surrounded by the channel region. A simulation study on electrical performance of SCJLFET has been done in TCAD. The study shows that SCJLFET exhibits comparatively higher Ion/Ioff ratio, lower subthreshold swing and higher threshold voltage than a conventional JLFET.\",\"PeriodicalId\":6804,\"journal\":{\"name\":\"2020 International Conference on Computational Performance Evaluation (ComPE)\",\"volume\":\"69 1\",\"pages\":\"608-610\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 International Conference on Computational Performance Evaluation (ComPE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ComPE49325.2020.9200095\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 International Conference on Computational Performance Evaluation (ComPE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ComPE49325.2020.9200095","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Surrounded Channel Junctionless Field Effect Transistor
This paper presents the surrounded channel Junctionless field effect transistor (SCJLFET) concept. A study on electrical characteristics of a SCJLFET is also presented. The gate is placed inside the body of the device. In other words the gate is surrounded by the channel region. A simulation study on electrical performance of SCJLFET has been done in TCAD. The study shows that SCJLFET exhibits comparatively higher Ion/Ioff ratio, lower subthreshold swing and higher threshold voltage than a conventional JLFET.
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