利用模拟离子密度曲线计算双层静电电位分布

D. Boda, D. Gillespie
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引用次数: 7

摘要

平面双层几何结构的计算机模拟提供了带有统计噪声的电荷分布。要从电荷分布计算平均静电势分布,必须在适当的边界条件下求解泊松方程。在这项工作中,我们证明了在泊松方程的集成版本的模拟域的边界上使用诺伊曼或狄利克雷bc是有利的。与放大噪声的传统卷积积分相比,这可以最大限度地减少模拟噪声密度曲线的误差。诺伊曼BC,其中电场是规定的,可用于恒表面电荷和恒电极电压集成。在定压系综中,限定电极之间的电位差是规定的,也可以使用Dirichlet BC,其中边界处的电位差是设定的。我们证明了新方法比卷积积分更快地提供了势剖面的收敛结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Calculating the Electrostatic Potential Profiles of Double Layers from Simulation Ion Density Profiles
Computer simulations of the planar double layer geometry provide the charge profile with statistical noise. To compute the mean electrostatic potential profile from the charge profile, one must solve Poisson’s equation with appropriate boundary conditions (BC). In this work, we show that it is advantageous to use the Neumann or Dirichlet BCs at the boundaries of the simulation domain with an integrated version of Poisson’s equation. This minimises errors from the simulation’s noisy density profiles, in contrast to traditional convolution integrals that amplify the noise. The Neumann BC, where the electric field is prescribed, can be used in both the constant surface charge and constant electrode voltage ensembles. In the constant voltage ensemble, where the potential difference between the confining electrodes is prescribed, one can also use the Dirichlet BC, where the potentials at the boundaries are set. We show that the new methods provide converged results for the potential profile faster than the convolution integral does.
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