集成亚毫米电路的新制造方法

Twenty Seventh International Conference on Infrared and Millimeter Waves Pub Date : 2002-12-16 DOI:10.1109/ICIMW.2002.1076086

K.W. Nye, Q. Xiao, J. Hesler, T. Crowe

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引用次数: 4

摘要

离散束引线二极管和束引线mmic的背面晶圆加工已经发展起来。背面蚀刻允许任意基材几何形状。波束引线用于与波导块进行电气连接和/或用作无衬底传输线。介绍了一种82.5 ~ 330ghz MMIC平衡四倍频器的制作方法。

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Novel fabrication of integrated submillimeter circuits

Backside wafer processing has been developed for discrete beamlead diodes and beamlead MMICs. Backside etching allows arbitrary substrate geometry. The beamleads are used to make electrical connections to a waveguide block and/or serve as substrateless transmission lines. The fabrication of an 82.5 to 330 GHz MMIC balanced frequency quadrupler is presented.

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Twenty Seventh International Conference on Infrared and Millimeter Waves

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