具有优化线性渐变轮廓的w波段InP - Gunn二极管

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147353

H. Kurita, A. Yokohata, A. Kodama, K. Suga, S. Kato, M. Ohmori

{"title":"具有优化线性渐变轮廓的w波段InP - Gunn二极管","authors":"H. Kurita, A. Yokohata, A. Kodama, K. Suga, S. Kato, M. Ohmori","doi":"10.1109/ICIPRM.1991.147353","DOIUrl":null,"url":null,"abstract":"The I-V characteristics and RF performances of W-band InP Gunn diodes with linearly graded doping profiles are presented. Measurements performed on a fabricated diode indicate all output power of 135 mW with 3.0% efficiency at 90 GHz and output power of 117 mW with 2.7% at 94 GHz. The efficiencies are about 1.5 times larger than the best efficiency obtained for flat diodes.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"274 1","pages":"280-283"},"PeriodicalIF":0.0000,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"W-band InP Gunn diodes with optimized linearly graded profiles\",\"authors\":\"H. Kurita, A. Yokohata, A. Kodama, K. Suga, S. Kato, M. Ohmori\",\"doi\":\"10.1109/ICIPRM.1991.147353\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The I-V characteristics and RF performances of W-band InP Gunn diodes with linearly graded doping profiles are presented. Measurements performed on a fabricated diode indicate all output power of 135 mW with 3.0% efficiency at 90 GHz and output power of 117 mW with 2.7% at 94 GHz. The efficiencies are about 1.5 times larger than the best efficiency obtained for flat diodes.<<ETX>>\",\"PeriodicalId\":6444,\"journal\":{\"name\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"volume\":\"274 1\",\"pages\":\"280-283\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-04-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1991.147353\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1991.147353","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

研究了掺杂线性梯度分布的w波段InP - Gunn二极管的I-V特性和射频性能。对自制二极管进行的测量表明，在90 GHz时，所有输出功率为135 mW，效率为3.0%;在94 GHz时，输出功率为117 mW，效率为2.7%。其效率大约是平面二极管最佳效率的1.5倍

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

W-band InP Gunn diodes with optimized linearly graded profiles

The I-V characteristics and RF performances of W-band InP Gunn diodes with linearly graded doping profiles are presented. Measurements performed on a fabricated diode indicate all output power of 135 mW with 3.0% efficiency at 90 GHz and output power of 117 mW with 2.7% at 94 GHz. The efficiencies are about 1.5 times larger than the best efficiency obtained for flat diodes.<>

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

自引率

0.00%

发文量