M. Varonen, L. Samoska, P. Kangaslahti, A. Fung, R. Gawande, M. Soria, A. Peralta, R. Lin, R. Lai, X. Mei, S. Sarkozy
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In this paper we report ultra-low-noise amplifier modules and amplifier module chains for V-band (50–75 GHz). The amplifier chips were fabricated in Northrop Grumman Corporation's (NGC) 35-nm InP HEMT technology and packaged in WR15 waveguide housings utilizing alumina E-plane waveguide probes. The amplifier modules achieve 18 to 27 K noise temperatures from 50 to 75 GHz when cryogenically cooled to 21 K. When measured through a mylar vacuum window, a cascade of two amplifier modules achieves a receiver noise temperature of 18.5 K at 58 GHz. A second chain has a measured receiver noise temperature between 20 to 28 K for the whole V-band. To the best of authors' knowledge, these are the lowest LNA noise temperatures for V-Band reported to date.
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