铝层及氧化对TiO2基双极电阻随机存取存储器(RRAM)性能的影响

2010 Silicon Nanoelectronics Workshop Pub Date : 2010-06-13 DOI:10.1109/SNW.2010.5562545

Jeong-Hoon Oh, K. Ryoo, Sunghun Jung, Kyung Seok Oh, Hyungcheol Shin, Byung-Gook Park

{"title":"铝层及氧化对TiO2基双极电阻随机存取存储器(RRAM)性能的影响","authors":"Jeong-Hoon Oh, K. Ryoo, Sunghun Jung, Kyung Seok Oh, Hyungcheol Shin, Byung-Gook Park","doi":"10.1109/SNW.2010.5562545","DOIUrl":null,"url":null,"abstract":"The effects of Al layer and plasma oxidation amount on TiO2 based bipolar RRAM cell are investigated, respectively. In Ir/Al/TiO2/Ir structure, VRESET is slightly lowered and the current ratio is increased. In case of plasma oxidation effect, the device which experienced short-time plasma oxidation has low set/reset voltages and high current and resistance ratios. These results are commonly thought to be induced by more oxygen vacancies.","PeriodicalId":6433,"journal":{"name":"2010 Silicon Nanoelectronics Workshop","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2010-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Effects of aluminum layer and oxidation on TiO2 based bipolar resistive random access memory (RRAM)\",\"authors\":\"Jeong-Hoon Oh, K. Ryoo, Sunghun Jung, Kyung Seok Oh, Hyungcheol Shin, Byung-Gook Park\",\"doi\":\"10.1109/SNW.2010.5562545\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The effects of Al layer and plasma oxidation amount on TiO2 based bipolar RRAM cell are investigated, respectively. In Ir/Al/TiO2/Ir structure, VRESET is slightly lowered and the current ratio is increased. In case of plasma oxidation effect, the device which experienced short-time plasma oxidation has low set/reset voltages and high current and resistance ratios. These results are commonly thought to be induced by more oxygen vacancies.\",\"PeriodicalId\":6433,\"journal\":{\"name\":\"2010 Silicon Nanoelectronics Workshop\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-06-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 Silicon Nanoelectronics Workshop\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SNW.2010.5562545\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 Silicon Nanoelectronics Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SNW.2010.5562545","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

研究了Al层和等离子体氧化量对TiO2基双极RRAM电池性能的影响。在Ir/Al/TiO2/Ir结构中，VRESET略微降低，电流比增大。在等离子体氧化作用下，经过短时间等离子体氧化的器件具有低的设定/复位电压和高的电流和电阻比。这些结果通常被认为是由更多的氧空位引起的。

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Effects of aluminum layer and oxidation on TiO2 based bipolar resistive random access memory (RRAM)

The effects of Al layer and plasma oxidation amount on TiO2 based bipolar RRAM cell are investigated, respectively. In Ir/Al/TiO2/Ir structure, VRESET is slightly lowered and the current ratio is increased. In case of plasma oxidation effect, the device which experienced short-time plasma oxidation has low set/reset voltages and high current and resistance ratios. These results are commonly thought to be induced by more oxygen vacancies.

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2010 Silicon Nanoelectronics Workshop

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