磷酸阴离子存在下冠醚介导FAU型和emt型沸石的合成:镓掺入的研究

B. De Witte , J. Patarin , T. Cholley
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引用次数: 3

摘要

在10SiO2:yAl2O3:(1−y)Ga2O3:zP2O5:(2.4−4.1)Na2O:0.4(18C-6或15C-5):(140−180)H2O的体系中进行了合成。对于Si-Al体系,由于磷酸阴离子对Al(OH)4/−的络合作用,P2O5的存在使得EMT在高碱度下结晶。值得注意的是,当18C-6被15C-5取代时,这种络合作用的效率较低,得到低Si/Al比的FAU相。少量Ga (y= 0.05-0.1)的加入导致了EMT和FAU的共生生长。这归因于Ga在连接连续FAU层的双六环中的优先位置。在没有P2O5的情况下,Ga的反应性比Al低,并且在框架上的分布更加均匀。在这些条件下,EMT结构中高达25%的Al可以被Ga取代。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Crown-ether mediated synthesis of FAU- and EMT-type zeolites in the presence of phosphate anions: study of the incorporation of gallium

Syntheses were performed in the system 10SiO2:yAl2O3:(1−y)Ga2O3:zP2O5:(2.4−4.1)Na2O:0.4(18C-6 or 15C-5):(140−180)H2O. For the Si-Al system, the presence of P2O5 allows the crystallization of EMT at high alkalinity, due to the complexation of Al(OH)4/− by phosphate anions. Remarkably, this complexation is less efficient when 18C-6 is replaced by 15C-5, giving FAU phases with low Si/Al ratio. The addition of small amounts of Ga (y=0.05–0.1) leads to intergrowth formation of EMT and FAU. This is ascribed to the preferential location of Ga in the double six-rings which connect the successive FAU sheets. In the absence of P2O5, Ga is less reactive than Al and will be more homogeneously distributed over the framework. Under these conditions, up to 25% of Al can be substituted by Ga in the EMT structure.

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