用213Nm光写入的集成波导和布拉格光栅

P. Gow, R. Bannerman, J. Gates, P. Mennea, C. Holmes, Alexander Jantzen, Peter G. R. Smith
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引用次数: 1

摘要

直接紫外写入能够通过聚焦紫外光束的平移在平面二氧化硅上制造低损耗通道波导、耦合器和布拉格光栅。器件通常使用244nm激光制造,依靠掺杂提供的光敏性来诱导形成波导所需的足够的折射率变化。然而,这些器件还需要在写入前加载氢和氘,以诱导足够的折射率变化来形成波导[1]。氢化不仅需要额外的处理,而且随着时间的推移,二氧化硅中存在的氢会耗尽,这可能导致最终书写结构的变化。213 nm的深紫外光曾被用于在无氢掺锗光纤中刻写强光纤布拉格光栅(fbg),其指数变化为1.2×10−3[2]。在这里,我们提出了第一次使用213 nm紫外激光来诱导折射率变化,足以同时定义无氢化的平面二氧化硅波导和布拉格光栅。这将潜在地允许大面积或二维设备的写入,而不会因放气而发生变化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Integrated Waveguides and Bragg Gratings UV Written with 213Nm Light
Direct UV writing is capable of fabricating low-loss channel waveguides, couplers and Bragg gratings in planar silica by translation through a focused UV beam. Devices are typically fabricated using 244nm laser light, relying on the photosensitivity provided by doping to induce sufficient refractive index change necessary to form waveguides. However, these devices also require hydrogen and deuterium loading prior to writing to induce sufficient refractive index change to form waveguides [1]. Hydrogenation not only requires additional processing but over time the hydrogen present within the silica depletes, which can cause variation of the final written structures. Deep UV light at 213 nm has previously been used to inscribe strong fibre Bragg gratings (FBGs) in hydrogen-free Ge-doped fibres achieving an index change of 1.2×10−3 [2]. Here we present the first use of a 213 nm UV laser to induce index change sufficient to simultaneously define waveguides and Bragg gratings in planar silica without hydrogenation. This would potentially allow writing of large area or two-dimensional devices without variation due to outgassing.
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