ULSI器件中硅原生氧化物的去除研究

Proceedings KORUS 2000. The 4th Korea-Russia International Symposium On Science and Technology Pub Date : 2000-06-27 DOI:10.1109/KORUS.2000.866118

Song-Ho Choi, K. Jeong, Jinhan Choi, Kyong-Wan Koo, T. Cho, H. Chun

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引用次数: 4

摘要

在紫外激发F/sub /+H/sub /干洗条件下，采用PSG、BSG、TEOS和热氧化膜对硅片进行了硅原生氧化物的刻蚀机理和选择性刻蚀研究。同时，通过确认开尔文电阻的降低，确定了uv激发F/sub 2/+H/sub 2/干洗后接触孔中硅原生氧化物的去除。

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A study on the removal of silicon native oxide for ULSI devices

In UV-excited F/sub 2/+H/sub 2/ dry cleaning, the etching mechanism and selective etching of silicon native oxide were investigated using PSG, BSG, TEOS and thermal oxide film on silicon wafers. Also, the removal of silicon native oxide in contact holes after UV-excited F/sub 2/+H/sub 2/ dry cleaning, was defined by confirming the reduction of Kelvin resistance.

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Proceedings KORUS 2000. The 4th Korea-Russia International Symposium On Science and Technology

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