用于深亚微米CMOS的剥离- wn /sub - x//多晶硅栅极技术

B. Lee, N. Park, S. Han, Kyungho Lee
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引用次数: 0

摘要

我们发现无定形WN/sub x//poly-Si的RTA导致氮原子的剥蚀,同时形成低电阻率W和高度可靠的原位势垒层。此外,经过选择性氧化和后退火处理后,裸露的WN/sub x//多晶硅栅极的电学特性优于W/WN/sub x//多晶硅栅极。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Denuded-WN/sub x//poly-Si gate technology for deep sub-micron CMOS
We found that RTA of amorphous WN/sub x//poly-Si resulted in denudation of nitrogen atoms with the formation of low resistivity W and a highly reliable in situ barrier layer simultaneously. Furthermore, electrical characteristics of the denuded-WN/sub x//poly-Si gate were superior to those of W/WN/sub x//poly-Si gate after selective oxidation and post anneal processes.
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