基于CMOS工艺的网格式上电极电容式聚酰亚胺湿度传感器

Shui-Ying Jia, Jian-hong Yang, Hong Xie, Xue‐yuan Cai, Cheng-Long Wu
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引用次数: 0

摘要

报道了一种采用标准CMOS工艺制作的栅格式上电极电容式聚酰亚胺湿度传感器。湿度传感器采用聚酰亚胺薄膜作为湿敏层,铝作为上电极和下电极。详细讨论了器件结构、制造工艺和传感器特性,如灵敏度、迟滞和响应时间。测试结果表明,电容-RH曲线在12%和92%范围内具有合理的线性关系,灵敏度为0.9 pF/RH,响应时间约为5.5 s。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Capacitive Polyimide Humidity Sensor with Grid-Type Upper Electrode by CMOS Process
A grid-type upper electrode capacitive polyimide humidity sensor fabricated by standard CMOS process was reported. The humidity sensor uses polyimide thin film as humidity-sensitive layer, and aluminum as upper electrode and lower electrode. Details of device structure, fabrication process and sensor characteristics such as sensitivity, hysteresis, and response time are discussed. Test results show that the capacitance-RH curves have reasonable linearity in the range of 12% and 92%, the sensitivity is 0.9 pF/RH, and the response time is about 5.5 s.
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来源期刊
电子器件
电子器件 电子学
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