由于硅二极管上反向偏置电压的微小波动而引起的异常DLTS信号

Journal of Physics E: Scientific Instruments Pub Date : 1989-12-01 DOI:10.1088/0022-3735/22/12/022

W. Y. Leong, D. Robbins

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引用次数: 1

摘要

在DLTS测量期间，报告了一个高背景电容瞬态信号，并发现这是由于被测二极管反向偏置的小波动引起的仪器效应。作者从对测量二极管电容瞬态的小反向偏置波动的考虑中证实了其观察到的行为。他们得出结论，这与深圈闭中心无关。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Anomalous DLTS signals due to small fluctuations in the reverse bias voltage on a Si diode

A high background capacitance transient signal during DLTS measurement is reported and found to be an instrumental effect due to small fluctuations in the reverse bias on the diode under test. The authors confirm its observed behaviour from a consideration of small reverse bias fluctuations on the measured diode capacitance transient. They conclude that it is not related to deep trap centres.

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Journal of Physics E: Scientific Instruments

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