高光导硅辉石单晶

J. Żmija , M.T. Borowiec , A. Majchrowski , H. Szymczak , T. Zayarnyuk
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引用次数: 6

摘要

采用顶种溶液生长(TSSG)技术生长Bi12TiO20和Bi40Ga2O63(钛和镓硅长石)单晶。用公式Bi12Ti1-xMxO20 (M=V, Ga, Pb)描述了混合硅辉体,其中一些还额外掺杂了Cu。对所得晶体在永久、切碎和脉冲光照下的光电导率和光致变色进行了研究和讨论。发现了在切碎和恒定光照条件下获得的光电导率的一些共同特征。通过比较最著名的硅钙石光导体,我们成功地获得了光电导率高出4到5个数量级的混合钛硅钙石。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Highly photoconducting sillenite single crystals

Single crystals of Bi12TiO20, and Bi40Ga2O63 (titanium, and gallium sillenite) were grown with use of Top Seeded Solution Growth (TSSG) technique. Mixed sillenites described by the formula Bi12Ti1–xMxO20 (M=V, Ga, Pb), some of them doped additionally with Cu were also obtained. Photoconductivity under permanent, chopped, and pulse illumination and photochromism of obtained crystals were investigated and discussed. Some characteristic common features were found for photoconductivity obtained under conditions of chopped and constant illumination. Comparing the best known sillenite photoconductors we managed to obtain mixed titanium sillenites having photoconductivity four to five orders of magnitude higher.

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