高电子迁移率晶体管制造中T -和Γ-Gates的三层抗蚀剂工艺

S. Riedmuller, J. Jacquet, M. Madel, C. Chang, G. Callet, S. Piotrowicz, S. Delage, J. Gruenenpuett, H. Blanck, F. Scholz
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引用次数: 1

摘要

利用一种新颖的三层抗蚀剂工艺,制备了栅极长度小于0.1 μm的InAlN/AlN/GaN T栅极和T栅极高电子迁移率晶体管。该工艺基于单曝光步骤的直接电子束光刻。此外,还报道了不同Γ栅极形状对射频功率性能的影响。Γ-gate移到欧姆触点的源侧,会导致较低的栅漏电容和较高的晶体管射频换能器增益Gt。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Three-Layer Resist Process for T - and Γ-Gates in High Electron Mobility Transistor Fabrication
By utilizing a novel three-layer resist process, InAlN/AlN/GaN T - and T -gate high electron mobility transistors with 0.1 μm gate lengths and below have been demonstrated. This process is based on direct electron-beam lithography with a single exposure step. Furthermore, the effect of different Γ -gate shapes on RF power performance is reported. A Γ-gate shift to the source side of the Ohmic contact, results in lower gate-to-drain capacitance and in higher transistor RF transducer gain Gt.
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