新封装架构下填充的最新进展

O. Suzuki
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引用次数: 4

摘要

各种类型的高级封装可供选择,包括扇出晶圆级封装(FO-WLP),倒装芯片芯片级封装(FC-CSP)和倒装芯片球栅阵列(FC-BGA)封装。这些先进的封装正在向多芯片封装架构迁移,例如2.3D、2.5D技术[1]-[6]。这些先进的球栅阵列(bga)在衬底或中间层上集成了多个芯片。本文通过对模具尺寸和模具成品率的比较,研究了向多芯片架构异构集成发展的动机。它还报告了2.5D封装趋势分析的结果。通过比较硅中间层和重分布层(RDL)中间层,进一步模拟研究了中间层封装的热机械应力行为,以应对封装翘曲和下填料和微凸起[7]的拉伸应力。对于多模插口封装,在模区下方和之间填充密封。在模具之间,下填土像墙一样垂直密封。讨论了凹模与衬垫之间、衬垫与衬底之间以及垂直衬垫壁的应力分布。将低热膨胀系数(CTE)/高模量底填料与相同中间体封装中的高CTE/低模量底填料进行了比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Recent Advances in Underfill for New Package Architectures
Various types of advanced packages are available, including Fan-Out Wafer Level Package (FO-WLP), Flip-Chip Chip-Scale Package (FC-CSP) and Flip-Chip Ball Grid Arrays (FC-BGA) packages. These advanced packages are migrating to multi-chip package architectures such as 2.3D, 2.5D technology [1]–[6]. These advanced ball grid arrays (BGAs) incorporate multiple dies on a substrate or an interposer. This paper examines the motivation for the move toward heterogeneous integration of multi-chip architecture by a comparison of die size and die yield. It also reports the results of the 2.5D package trend analysis. By comparing a silicon interposer with a redistribution layer (RDL) interposer, further simulations were performed to investigate the thermomechanical stress behavior of an interposer package against the warpage of the package and tensile stress of underfill and micro-bumps [7]. For a multi-die interposer package, underfill seals below and between the die areas. Between the dies, the underfill was sealed vertically like a wall. The stress distribution of the underfill between the die and the interposer, the underfill between the interposer and the substrate, and the vertical underfill wall is discussed. Low Coefficient-of-Thermal-Expansion (CTE)/high modulus underfill was compared to high CTE/low modulus underfill in the same interposer package.
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