超流氦表面电子在带电衬底通道上的量子化电导率

V. A. Nikolaenko, A. Smorodin, S. Sokolov
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引用次数: 0

摘要

用输运方法研究了准一维表面电子(q1d - se)在带电型衬底超流氦上的携带特性。衬底是排在光纤段的。实验在1.5 K-0.6 K温度范围内进行,电子密度高达109 cm-2。根据相图“电子气-维格纳晶体”的研究,在温度高于费米能量的电子气区和电子密度远为“量子熔化”的电子气区进行了研究。电场中的衬底静电模型表明,截面上的电位调制使光纤顶部带电,从而增加了Q1D-SE电位。考虑到温度和电子弛豫时间,表面电子运动满足量子化条件。在某一温度较低时,电导率呈阶梯状,其差值与电子态密度呈峰状,随能谱的峰距而变化。降低温度的显著步骤可引起电子密度在能级上的重新分布和通道边界附近的SEs热活化运动。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Quantization Conductivity of Surface Electrons over Superfluid Helium at the Charged Substrate Channels
The carry features of a quasi-one-dimensional surface electrons (Q1D-SEs) over the superfluid helium at the charged profiled substrate is investigated by the transport method. Substrate is row the optical fiber segments. The experiments carried out in temperature range 1.5 K-0.6 K at electron densities up to 109 cm-2. According a phase diagram “electron gas - Wigner crystal” research performed in the electron gas region at temperature higher the Fermi energy and at electron density far “quantum melting». The substrate electrostatic model in the electric field demonstrates the potential modulation in the cross section lets to charge the fiber tops increasing thereby the Q1D-SE potential well. The surface electrons motion satisfies the quantization condition in view both the temperature and the electron relaxation time. Lower of some temperature the conductivity is a steps-like and it differential is a peaks-like simile to the electron states density with the peak distance according energy spectrum. Pronounced steps at lowering temperature can be caused the electron density redistribution on the energy levels and the SEs thermo-activation motion near the channel bounders.
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