bfeo3钙钛矿氧化物GGA+U与L(S)DA+U的结构稳定性和磁性有序性比较

M. Derras, N. Hamdad
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引用次数: 1

摘要

摘要对BiFeO3磁性钙钛矿进行了从头计算。考虑U- hubbard校正(DFT+U),进行了精确的密度泛函理论计算,以解释3d-Fe态的现场库仑相互作用。我们应用了全势线性化增广平面波(FP-LAPW)方法。用局部自旋密度近似(L(S)DA+U)和广义梯度近似(GGA+U)处理交换相关效应。平衡格与其他理论和实验数据吻合得很好。自旋向上和自旋Dn态之间的磁化能差很小。本文还讨论了在铁磁立方相(Pm-3m)、a型反铁磁相(P4/mmc)和g型反铁磁相(Fm-3m)等不同磁构型下的自旋效应和磁矩。磁性的性质主要是由于铁位表现出g型反铁磁有序。电子结构表明,BiFeO3具有金属带隙。这种多铁材料表现出3d-Fe和2p-O轨道的强烈杂化。因此,多铁BiFeO3钙钛矿由于其具有广阔的技术潜力而引起了人们的极大研究兴趣。它在自旋电子学中具有潜在的应用前景,并有助于开发下一代数据存储和多功能技术设备。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Structural Stability and Magnetic Ordering in BiFeO3 Perovskite Oxide: A Comparative Study GGA+U vs L(S)DA+U
Abstract Ab initio calculations of BiFeO3 magnetic perovskite are carried. Accurate density functional theory calculations were performed considering a U-Hubbard correction (DFT+U) to account for on-site Coulomb interactions of the 3d-Fe states. We have applied the Full-potential linearized augmented plane waves (FP-LAPW) method. Exchange-correlation effects are treated using the Local Spin Density approximation (L(S)DA+U) vs generalized gradient approximations (GGA+U). Equilibrium lattices agree very well with other theoretical and experimental data. The magnetization energy differences between Spin Up and Spin Dn states are small. Spin effect and magnetic moment obtained from subsequent (L(S)DA+U) and (GGA+U) calculations are also discussed in different magnetic configurations: The Ferromagnetic cubic phase (Pm-3m), The A-type Antiferromagnetic (P4/mmc) and The G-type Antiferromagnetic (Fm-3m). The nature of magnetism arises mainly from the Fe-site exhibiting a G-type antiferromagnetic ordering. The electronic structure shows that BiFeO3 has a metallic band gap. This multiferroic exhibit strong hybridization of the 3d-Fe and 2p-O orbitals. Therefore, the Multiferroic BiFeO3 perovskite has driven significant research interest due to their promising technological potential. It’s a good candidate for potential applications in spintronic, and to aid the development of the next generation of data storage and multi-functional technological devices.
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