利用暗-亮孤子转换控制产生单电子-空穴对

R. Jomtarak, C. Teeka, P. Yupapin, J. Ali
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引用次数: 0

摘要

最近,在1.06-µm分离吸收雪崩(倍增)inp器件中产生的电子空穴对[1]、在锗浓度为2% - 6%、厚度为200 - 2µm的SiGe/Si平面波导[2]、在810 nm发射100 fs激光脉冲时产生的电子空穴对、在1.55µm波长用c.w.探针束监测自由载流子吸收瞬态、双极晶体管[3]、CMOS工艺[4]、InAs- gasb超晶格(SL)光电二极管[5],谐振微腔[6],使用单个InAs量子点和高q低语廊模式的腔- qed[7]。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Single electron-hole pair generation using dark-bright solitons conversion control
Recently, the electron-hole pair generated in 1.06-µm separate-absorber-avalanche (multiplier) InP-based devices [1], SiGe/Si planar waveguides [2] fabricated with a Ge concentration ranging from 2% to 6% and different thicknesses ranging from 200 nm to 2 µm, generating electron-hole pairs with a 100 fs laser pulse emitted at 810 nm, and monitoring the free-carrier absorption transient with a c.w. probe beam at 1.55 µm, bipolar transistors [3], CMOS process [4], InAs-GaSb superlattice (SL) photodiodes [5], resonant microcavity [6], A cavity-QED using a single InAs quantum dot and a high-Q whispering gallery mode [7].
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