{"title":"化合物半导体AlAsSb/In0.59Ga0.41As/GaAs0.53Sb0.47的工艺序列优化及纳米异质结构分析","authors":"J. Vijay, Divya Bharadwaj, Amit Rathi","doi":"10.22161/ijaers.102.17","DOIUrl":null,"url":null,"abstract":"In this work, the process sequence optimization for double quantum well structure with compound materials AlAsSb/In0.59Ga0.41As/GaAs0.53Sb0.47 is discussed for fabrication purposes. The optimized parameters of the sequences are selected based on the literature study of the materials properties, nanoscale engineering and MBE growth parameters. The thickness of the material layers in the heterostructure is under our control. This is a significant benefit of heterostructures for device construction. In order for uniform epitaxial growth of ternary material AlAsSb, InGaAs and GaAsSb, the deposition time is chosen very slow i.e. 0.5 micrometers per hour during the process in the MBE.","PeriodicalId":13758,"journal":{"name":"International Journal of Advanced Engineering Research and Science","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Process sequence optimization and structural analysis of nanoscale heterostructure using compound semiconductors AlAsSb/In0.59Ga0.41As/GaAs0.53Sb0.47\",\"authors\":\"J. Vijay, Divya Bharadwaj, Amit Rathi\",\"doi\":\"10.22161/ijaers.102.17\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, the process sequence optimization for double quantum well structure with compound materials AlAsSb/In0.59Ga0.41As/GaAs0.53Sb0.47 is discussed for fabrication purposes. The optimized parameters of the sequences are selected based on the literature study of the materials properties, nanoscale engineering and MBE growth parameters. The thickness of the material layers in the heterostructure is under our control. This is a significant benefit of heterostructures for device construction. In order for uniform epitaxial growth of ternary material AlAsSb, InGaAs and GaAsSb, the deposition time is chosen very slow i.e. 0.5 micrometers per hour during the process in the MBE.\",\"PeriodicalId\":13758,\"journal\":{\"name\":\"International Journal of Advanced Engineering Research and Science\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Journal of Advanced Engineering Research and Science\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.22161/ijaers.102.17\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Advanced Engineering Research and Science","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.22161/ijaers.102.17","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Process sequence optimization and structural analysis of nanoscale heterostructure using compound semiconductors AlAsSb/In0.59Ga0.41As/GaAs0.53Sb0.47
In this work, the process sequence optimization for double quantum well structure with compound materials AlAsSb/In0.59Ga0.41As/GaAs0.53Sb0.47 is discussed for fabrication purposes. The optimized parameters of the sequences are selected based on the literature study of the materials properties, nanoscale engineering and MBE growth parameters. The thickness of the material layers in the heterostructure is under our control. This is a significant benefit of heterostructures for device construction. In order for uniform epitaxial growth of ternary material AlAsSb, InGaAs and GaAsSb, the deposition time is chosen very slow i.e. 0.5 micrometers per hour during the process in the MBE.
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