{"title":"溶胶-凝胶浸涂法制备ZAO薄膜的电学和光学性能","authors":"C. Shen, Haifeng Li, Jianfeng Li, Yuzhi Xue","doi":"10.1109/SOPO.2009.5230067","DOIUrl":null,"url":null,"abstract":"Firstly, undoped ZnO thin films were prepared on glass substrates by Sol-Gel dip-coating (by assembled diminutive dip-coating device),and radio-frequency magnetron sputtering respectively. X-ray diffraction(XRD). Scanning Electron Microscopy(SEM), Spectrophotometer, Surface profilometry were used to characterize their properties. The results indicated:on the glass substrates, at the same annealed temperature, the films prepared by radio-frequency magnetron sputtering had more excellent crystallization quality. Then, Al-doped (ZnO:Al(ZAO)) thin films were solely prepared on glass substrates by Sol-Gel dip-coating method(by assembled diminutive dip-coating device), Scanning Electron Microscopy(SEM), UV-Visible spectrophotometry(UV-Vis), digital four-point probe electrical resistance measurement were used to characterize their surface morphologies, transmission property, film thickness, resistance etc. The results indicated: The morphologies of ZAO thin films were more compact when the Al 3+ dopant concentration was 1.0at%; with increasing annealing temperature, the average grain size of the film increased, the resistance decreased. Under the Al 3+ dopant concentration of 1.5at%, annealing temperature of 550 0 C and annealing time of 2h , the average transmissivity of the film exceeded 70% within the visible region and resistance was 5.9×10 -2 � .cm.","PeriodicalId":6416,"journal":{"name":"2009 Symposium on Photonics and Optoelectronics","volume":"5 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Electrical and Optical Properties of ZAO Thin Films Prepared by Sol-Gel Dip-Coating Method\",\"authors\":\"C. Shen, Haifeng Li, Jianfeng Li, Yuzhi Xue\",\"doi\":\"10.1109/SOPO.2009.5230067\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Firstly, undoped ZnO thin films were prepared on glass substrates by Sol-Gel dip-coating (by assembled diminutive dip-coating device),and radio-frequency magnetron sputtering respectively. X-ray diffraction(XRD). Scanning Electron Microscopy(SEM), Spectrophotometer, Surface profilometry were used to characterize their properties. The results indicated:on the glass substrates, at the same annealed temperature, the films prepared by radio-frequency magnetron sputtering had more excellent crystallization quality. Then, Al-doped (ZnO:Al(ZAO)) thin films were solely prepared on glass substrates by Sol-Gel dip-coating method(by assembled diminutive dip-coating device), Scanning Electron Microscopy(SEM), UV-Visible spectrophotometry(UV-Vis), digital four-point probe electrical resistance measurement were used to characterize their surface morphologies, transmission property, film thickness, resistance etc. The results indicated: The morphologies of ZAO thin films were more compact when the Al 3+ dopant concentration was 1.0at%; with increasing annealing temperature, the average grain size of the film increased, the resistance decreased. Under the Al 3+ dopant concentration of 1.5at%, annealing temperature of 550 0 C and annealing time of 2h , the average transmissivity of the film exceeded 70% within the visible region and resistance was 5.9×10 -2 � .cm.\",\"PeriodicalId\":6416,\"journal\":{\"name\":\"2009 Symposium on Photonics and Optoelectronics\",\"volume\":\"5 1\",\"pages\":\"1-4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 Symposium on Photonics and Optoelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOPO.2009.5230067\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 Symposium on Photonics and Optoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOPO.2009.5230067","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electrical and Optical Properties of ZAO Thin Films Prepared by Sol-Gel Dip-Coating Method
Firstly, undoped ZnO thin films were prepared on glass substrates by Sol-Gel dip-coating (by assembled diminutive dip-coating device),and radio-frequency magnetron sputtering respectively. X-ray diffraction(XRD). Scanning Electron Microscopy(SEM), Spectrophotometer, Surface profilometry were used to characterize their properties. The results indicated:on the glass substrates, at the same annealed temperature, the films prepared by radio-frequency magnetron sputtering had more excellent crystallization quality. Then, Al-doped (ZnO:Al(ZAO)) thin films were solely prepared on glass substrates by Sol-Gel dip-coating method(by assembled diminutive dip-coating device), Scanning Electron Microscopy(SEM), UV-Visible spectrophotometry(UV-Vis), digital four-point probe electrical resistance measurement were used to characterize their surface morphologies, transmission property, film thickness, resistance etc. The results indicated: The morphologies of ZAO thin films were more compact when the Al 3+ dopant concentration was 1.0at%; with increasing annealing temperature, the average grain size of the film increased, the resistance decreased. Under the Al 3+ dopant concentration of 1.5at%, annealing temperature of 550 0 C and annealing time of 2h , the average transmissivity of the film exceeded 70% within the visible region and resistance was 5.9×10 -2 � .cm.