纳米片场效应晶体管芯片上的节能系统

Mohan Kumar N. Dr
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引用次数: 36

摘要

随着集成电路集成度的提高,片上系统(SoC)设计也在不断发展。该技术在单个芯片上包含多个知识产权模块。随着晶体管的小型化,传统元件面临着功耗、漏损等诸多挑战。这些因素危及微系统的成本效率,并危及半导体行业在纳米范围内延长摩尔定律的能力。这是通过引入碳材料如纳米片场效应晶体管来克服的。它们在面积和功率效率方面优于传统元件。我们设计了一种能量和功率效率高的纳米片FET SoC,提供噪声容忍和内存优化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
ENERGY AND POWER EFFICIENT SYSTEM ON CHIP WITH NANOSHEET FET
As the level of integration of IC increases, System on Chip (SoC) design has evolved. This technology comprises of several intellectual property blocks on a single chip. With downsizing of transistors, the traditional elements used impose several challenges such as power dissipation, leakage and so on. These factors risk the cost efficiency of microsystems and risk the semiconductor industry’s capability to prolong Moore’s law in the nanometer range. This is overcome by the introduction of carbon materials such as nanosheet FET. They are advantageous over the traditional elements in terms of area and power efficiency. We design an energy and power efficient SoC with nanosheet FET that provides noise tolerance and memory optimization.
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