{"title":"深亚微米FDSOIMOSFET中扭结效应的数学建模","authors":"S. Bhattacharya, P. Ray, J. Sanyal","doi":"10.1109/EDCT.2018.8405088","DOIUrl":null,"url":null,"abstract":"The kink effect has been observed in deep-submicron Fully Depleted Silicon-On-Insulator (FDSOI) MOSFETs and the corresponding devices have also been studied through physical modelling and simulation. The current work is an endeavour to put forward a mathematical model for the kink effect as observed in deep-submicron MOSFETs which is found to agree with the modelling and simulation results obtained by other researchers in the field.","PeriodicalId":6507,"journal":{"name":"2018 Emerging Trends in Electronic Devices and Computational Techniques (EDCT)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Mathematical modelling of kink effect in deep-submicron FDSOIMOSFET\",\"authors\":\"S. Bhattacharya, P. Ray, J. Sanyal\",\"doi\":\"10.1109/EDCT.2018.8405088\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The kink effect has been observed in deep-submicron Fully Depleted Silicon-On-Insulator (FDSOI) MOSFETs and the corresponding devices have also been studied through physical modelling and simulation. The current work is an endeavour to put forward a mathematical model for the kink effect as observed in deep-submicron MOSFETs which is found to agree with the modelling and simulation results obtained by other researchers in the field.\",\"PeriodicalId\":6507,\"journal\":{\"name\":\"2018 Emerging Trends in Electronic Devices and Computational Techniques (EDCT)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 Emerging Trends in Electronic Devices and Computational Techniques (EDCT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDCT.2018.8405088\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 Emerging Trends in Electronic Devices and Computational Techniques (EDCT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDCT.2018.8405088","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Mathematical modelling of kink effect in deep-submicron FDSOIMOSFET
The kink effect has been observed in deep-submicron Fully Depleted Silicon-On-Insulator (FDSOI) MOSFETs and the corresponding devices have also been studied through physical modelling and simulation. The current work is an endeavour to put forward a mathematical model for the kink effect as observed in deep-submicron MOSFETs which is found to agree with the modelling and simulation results obtained by other researchers in the field.
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