FORTIS传感器的第一束测试结果

IEEE Nuclear Science Symposuim & Medical Imaging Conference Pub Date : 2010-10-01 DOI:10.1109/NSSMIC.2010.5873919

J. Velthuis

{"title":"FORTIS传感器的第一束测试结果","authors":"J. Velthuis","doi":"10.1109/NSSMIC.2010.5873919","DOIUrl":null,"url":null,"abstract":"We have obtained first results in a testbeam for the first 4T Monolithic Active Pixel Sensor for particle physics, FORTIS. We have measured a S/N of more than 100 for MIPs due to the excellent noise performance of the 4T architecture. Two versions of the sensor were tested; with and without deep Pwell areas in-pixel. The deep Pwell areas allow the incorporation of PMOS transistors inside the pixels signal charge loss. The presented results demonstrate that the deep Pwell sensors improve the performance.","PeriodicalId":13048,"journal":{"name":"IEEE Nuclear Science Symposuim & Medical Imaging Conference","volume":"38 1","pages":"1017-1020"},"PeriodicalIF":0.0000,"publicationDate":"2010-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"First beam test results of the FORTIS sensor\",\"authors\":\"J. Velthuis\",\"doi\":\"10.1109/NSSMIC.2010.5873919\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have obtained first results in a testbeam for the first 4T Monolithic Active Pixel Sensor for particle physics, FORTIS. We have measured a S/N of more than 100 for MIPs due to the excellent noise performance of the 4T architecture. Two versions of the sensor were tested; with and without deep Pwell areas in-pixel. The deep Pwell areas allow the incorporation of PMOS transistors inside the pixels signal charge loss. The presented results demonstrate that the deep Pwell sensors improve the performance.\",\"PeriodicalId\":13048,\"journal\":{\"name\":\"IEEE Nuclear Science Symposuim & Medical Imaging Conference\",\"volume\":\"38 1\",\"pages\":\"1017-1020\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Nuclear Science Symposuim & Medical Imaging Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NSSMIC.2010.5873919\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Nuclear Science Symposuim & Medical Imaging Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NSSMIC.2010.5873919","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

我们在粒子物理的第一个4T单片有源像素传感器FORTIS的测试束中获得了第一个结果。由于4T架构出色的噪声性能，我们测量到MIPs的信噪比超过100。测试了两种版本的传感器;像素内有无深度Pwell区域。深Pwell区允许在像素信号电荷损失内合并PMOS晶体管。实验结果表明，深阱传感器提高了传感器的性能。

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First beam test results of the FORTIS sensor

We have obtained first results in a testbeam for the first 4T Monolithic Active Pixel Sensor for particle physics, FORTIS. We have measured a S/N of more than 100 for MIPs due to the excellent noise performance of the 4T architecture. Two versions of the sensor were tested; with and without deep Pwell areas in-pixel. The deep Pwell areas allow the incorporation of PMOS transistors inside the pixels signal charge loss. The presented results demonstrate that the deep Pwell sensors improve the performance.

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IEEE Nuclear Science Symposuim & Medical Imaging Conference

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