中线:FinFET技术面临的挑战及其解决方案

S. Mishra, E. Geiss, Aditya Kumar, A. Malinowski, Gao Wen Zhi, Wenhe Lin, B. Indajang, D. Slisher
{"title":"中线:FinFET技术面临的挑战及其解决方案","authors":"S. Mishra, E. Geiss, Aditya Kumar, A. Malinowski, Gao Wen Zhi, Wenhe Lin, B. Indajang, D. Slisher","doi":"10.1109/ASMC49169.2020.9185205","DOIUrl":null,"url":null,"abstract":"This paper discusses major challenges faced in middle of line (MOL) manufacturing for FinFET technology. This throws light on major yield detractors for inline wafer yield as well as challenges involved at wafer sort. Since contact resistance is one of the critical parameters for device performance, it presents major challenges and resolutions for device enhancement due to a reduction in contact resistances. For FinFET, contact to poly pitch is very small, and as a result there were some reliability challenges in the initial development phase, the resolution of which is discussed in detail.","PeriodicalId":6771,"journal":{"name":"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"69 1","pages":"1-5"},"PeriodicalIF":0.0000,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Middle of Line: Challenges and Their Resolution for FinFET Technology\",\"authors\":\"S. Mishra, E. Geiss, Aditya Kumar, A. Malinowski, Gao Wen Zhi, Wenhe Lin, B. Indajang, D. Slisher\",\"doi\":\"10.1109/ASMC49169.2020.9185205\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper discusses major challenges faced in middle of line (MOL) manufacturing for FinFET technology. This throws light on major yield detractors for inline wafer yield as well as challenges involved at wafer sort. Since contact resistance is one of the critical parameters for device performance, it presents major challenges and resolutions for device enhancement due to a reduction in contact resistances. For FinFET, contact to poly pitch is very small, and as a result there were some reliability challenges in the initial development phase, the resolution of which is discussed in detail.\",\"PeriodicalId\":6771,\"journal\":{\"name\":\"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)\",\"volume\":\"69 1\",\"pages\":\"1-5\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASMC49169.2020.9185205\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASMC49169.2020.9185205","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

本文讨论了FinFET技术在中线(MOL)制造中面临的主要挑战。这就揭示了直列晶圆产率的主要影响因素,以及晶圆分选所面临的挑战。由于接触电阻是器件性能的关键参数之一,因此由于接触电阻的减少,它提出了器件增强的主要挑战和解决方案。对于FinFET而言,与多间距的接触非常小,因此在初始开发阶段存在一些可靠性挑战,详细讨论了解决这些挑战的方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Middle of Line: Challenges and Their Resolution for FinFET Technology
This paper discusses major challenges faced in middle of line (MOL) manufacturing for FinFET technology. This throws light on major yield detractors for inline wafer yield as well as challenges involved at wafer sort. Since contact resistance is one of the critical parameters for device performance, it presents major challenges and resolutions for device enhancement due to a reduction in contact resistances. For FinFET, contact to poly pitch is very small, and as a result there were some reliability challenges in the initial development phase, the resolution of which is discussed in detail.
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