LowLEAC:用于缓存的低泄漏能量架构

Rashmi Girmal, Arun Kumar Somani
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引用次数: 0

摘要

随着特征尺寸的不断减小,计算设备的静态功耗已成为人们关注的问题。片上存储器是处理器泄漏功耗的主要贡献者,因为它们的晶体管数量很大。我们提出了一种用于缓存的低泄漏能量架构,称为LowLEAC,以最大限度地减少由CMOS SRAM单元制成的缓存的静态功耗。该技术的基础是只保留k条最近使用的缓存线路通电,其他线路断电,以减少泄漏功耗。然而,由于数据的重新获取,该控制增加了动态功率。为了克服这个问题,我们部署了CMOS兼容的非易失性SRAM单元(称为cNVSRAM)来实现缓存。cNVSRAM单元在常规模式下作为常规SRAM工作,当高速缓存线关闭或进入休眠模式时,将数据保存在非易失性备份中。非易失性备份模式有助于提高缓存的可靠性,并避免由于非活动缓存线路的数据丢失而造成的损失。在很小的面积损失下,LowLEAC实现了18%的节能,而对性能的影响微不足道。LowLEAC是一种适用于移动计算设备中缓存存储器的架构,可以最大限度地减少电池功耗并减少热量。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
LowLEAC: Low Leakage Energy Architecture for Caches
With the ever-decreasing feature sizes, static power dissipation has become a concern in computing devices. On-chip memories are a major contributor towards the processor's leakage power dissipation due to their large transistor count. We propose a Low Leakage Energy Architecture for Caches, called LowLEAC to minimize the static power dissipation in caches made of CMOS SRAM cells. This technique is based on keeping only k most recently used cache lines powered on other lines powered off to reduce the leakage power dissipation. The control However increases the dynamic power due to re-fetching of data. To overcome that, we deploy CMOS compatible non-volatile SRAM cell, called cNVSRAM, to implement caches. The cNVSRAM cell works as a conventional SRAM in the regular mode and saves the data in a non-volatile back up when a cache line is turned off or put in the sleep mode. The non-volatile back up mode helps improve the dependability of the cache and avoids the penalty occurred due to loss of data from the inactive cache lines. With a small area penalty, LowLEAC achieves 18% energy savings with insignificant impact on the performance. LowLEAC is a suitable architecture for cache memory in mobile computing devices to minimize battery power consumption and reduce heat.
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