过渡金属氧化物异质结太阳能电池的s型J-V曲线分析

D. Scire, Marco Bonadonna, Yifeng Zhao, P. Procel, O. Isabella, M. Zeman, R. Macaluso, M. Mosca, I. Crupi
{"title":"过渡金属氧化物异质结太阳能电池的s型J-V曲线分析","authors":"D. Scire, Marco Bonadonna, Yifeng Zhao, P. Procel, O. Isabella, M. Zeman, R. Macaluso, M. Mosca, I. Crupi","doi":"10.23919/AEIT50178.2020.9241142","DOIUrl":null,"url":null,"abstract":"The use of transition metal oxides for the selective carrier contact in the crystalline silicon solar cells technology is rising to interest for the excellent optoelectrical properties of these materials whose implementation, however, can result in lousy performing cells due to an S-shaped electrical characteristic. In this paper, we fabricated solar cells showing S-shaped J-V curve and carried out an analysis of the reasons of such behavior using a model involving the series of a standard cell equivalent circuit with a Schottky junction in order to explain these atypical performances. A good matching between the experimental measurements and the adopted theoretical model was obtained. The extracted parameters are listed and analyzed to shade light on the reasons behind the low-performance cells.","PeriodicalId":6689,"journal":{"name":"2020 AEIT International Annual Conference (AEIT)","volume":"31 1","pages":"1-6"},"PeriodicalIF":0.0000,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Analysis of Transition Metal Oxides based Heterojunction Solar Cells with S-shaped J-V curves\",\"authors\":\"D. Scire, Marco Bonadonna, Yifeng Zhao, P. Procel, O. Isabella, M. Zeman, R. Macaluso, M. Mosca, I. Crupi\",\"doi\":\"10.23919/AEIT50178.2020.9241142\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The use of transition metal oxides for the selective carrier contact in the crystalline silicon solar cells technology is rising to interest for the excellent optoelectrical properties of these materials whose implementation, however, can result in lousy performing cells due to an S-shaped electrical characteristic. In this paper, we fabricated solar cells showing S-shaped J-V curve and carried out an analysis of the reasons of such behavior using a model involving the series of a standard cell equivalent circuit with a Schottky junction in order to explain these atypical performances. A good matching between the experimental measurements and the adopted theoretical model was obtained. The extracted parameters are listed and analyzed to shade light on the reasons behind the low-performance cells.\",\"PeriodicalId\":6689,\"journal\":{\"name\":\"2020 AEIT International Annual Conference (AEIT)\",\"volume\":\"31 1\",\"pages\":\"1-6\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-09-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 AEIT International Annual Conference (AEIT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/AEIT50178.2020.9241142\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 AEIT International Annual Conference (AEIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/AEIT50178.2020.9241142","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

在晶体硅太阳能电池技术中,使用过渡金属氧化物作为选择性载流子接触,由于这些材料具有优异的光电性能而引起人们的兴趣,然而,由于s型电学特性,这些材料的实现可能导致性能不佳的电池。在本文中,我们制造了具有s形J-V曲线的太阳能电池,并使用涉及具有肖特基结的标准电池等效电路系列的模型对这种行为的原因进行了分析,以解释这些非典型性能。实验结果与理论模型吻合较好。将提取的参数列出并进行分析,以揭示性能低下的电池背后的原因。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Analysis of Transition Metal Oxides based Heterojunction Solar Cells with S-shaped J-V curves
The use of transition metal oxides for the selective carrier contact in the crystalline silicon solar cells technology is rising to interest for the excellent optoelectrical properties of these materials whose implementation, however, can result in lousy performing cells due to an S-shaped electrical characteristic. In this paper, we fabricated solar cells showing S-shaped J-V curve and carried out an analysis of the reasons of such behavior using a model involving the series of a standard cell equivalent circuit with a Schottky junction in order to explain these atypical performances. A good matching between the experimental measurements and the adopted theoretical model was obtained. The extracted parameters are listed and analyzed to shade light on the reasons behind the low-performance cells.
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