电流感应的全线性多态磁开关

Meiyin Yang, Yanru Li, Jun Luo, Yongcheng Deng, N. Zhang, Xueying Zhang, Shaoxin Li, Yan Cui, Peiyue Yu, Tengzhi Yang, Y. Sheng, Sumei Wang, Jing Xu, Chao Zhao, Kaiyou Wang
{"title":"电流感应的全线性多态磁开关","authors":"Meiyin Yang, Yanru Li, Jun Luo, Yongcheng Deng, N. Zhang, Xueying Zhang, Shaoxin Li, Yan Cui, Peiyue Yu, Tengzhi Yang, Y. Sheng, Sumei Wang, Jing Xu, Chao Zhao, Kaiyou Wang","doi":"10.1103/PhysRevApplied.15.054013","DOIUrl":null,"url":null,"abstract":"We present an alternative mechanism to control the domain wall motion, whose directions are manipulated by the amplitude of electrical currents when modulating the ratio of D/A (constants of Dzyaloshinskii-Moriya interaction over exchange interaction). To confirm this mechanism, we observe this type of domain wall motion and demonstrate linear magnetic switching without hysteresis effect via adjusting the D/A of Ta/Pt/Co/Ta multilayer device with ion implantations. We further find field-free biased and chirally controllable multistate switching at the lateral interface of ion exposed and unexposed area, which is due to the current induced Neel wall motion and a strong exchange coupling at this interface.","PeriodicalId":8423,"journal":{"name":"arXiv: Applied Physics","volume":"42 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2020-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"All-Linear Multistate Magnetic Switching Induced by Electrical Current\",\"authors\":\"Meiyin Yang, Yanru Li, Jun Luo, Yongcheng Deng, N. Zhang, Xueying Zhang, Shaoxin Li, Yan Cui, Peiyue Yu, Tengzhi Yang, Y. Sheng, Sumei Wang, Jing Xu, Chao Zhao, Kaiyou Wang\",\"doi\":\"10.1103/PhysRevApplied.15.054013\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present an alternative mechanism to control the domain wall motion, whose directions are manipulated by the amplitude of electrical currents when modulating the ratio of D/A (constants of Dzyaloshinskii-Moriya interaction over exchange interaction). To confirm this mechanism, we observe this type of domain wall motion and demonstrate linear magnetic switching without hysteresis effect via adjusting the D/A of Ta/Pt/Co/Ta multilayer device with ion implantations. We further find field-free biased and chirally controllable multistate switching at the lateral interface of ion exposed and unexposed area, which is due to the current induced Neel wall motion and a strong exchange coupling at this interface.\",\"PeriodicalId\":8423,\"journal\":{\"name\":\"arXiv: Applied Physics\",\"volume\":\"42 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-06-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"arXiv: Applied Physics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1103/PhysRevApplied.15.054013\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"arXiv: Applied Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1103/PhysRevApplied.15.054013","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

我们提出了一种控制畴壁运动的替代机制,当调制D/A比(Dzyaloshinskii-Moriya相互作用与交换相互作用的常数)时,其方向由电流幅度操纵。为了证实这一机制,我们观察了这种畴壁运动,并通过调整离子注入Ta/Pt/Co/Ta多层器件的D/A来实现无迟滞效应的线性磁开关。我们进一步发现离子暴露区和未暴露区横向界面上的无场偏置和手性可控多态开关,这是由于电流诱导的尼尔壁运动和该界面上的强交换耦合。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
All-Linear Multistate Magnetic Switching Induced by Electrical Current
We present an alternative mechanism to control the domain wall motion, whose directions are manipulated by the amplitude of electrical currents when modulating the ratio of D/A (constants of Dzyaloshinskii-Moriya interaction over exchange interaction). To confirm this mechanism, we observe this type of domain wall motion and demonstrate linear magnetic switching without hysteresis effect via adjusting the D/A of Ta/Pt/Co/Ta multilayer device with ion implantations. We further find field-free biased and chirally controllable multistate switching at the lateral interface of ion exposed and unexposed area, which is due to the current induced Neel wall motion and a strong exchange coupling at this interface.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信