一种基于经验蚀刻模型的混合PPC方法,用于0.14/spl mu/m DRAM及以上的生产

Chul-Hong Park, S. Choi, Sang-Uhk Rhie, Dong-Hyun Kim, Jun-Seong Park, Tae-Hwang Jang, Ji-Soong Park, Yoo-Hyon Kim, Moon-Hyun Yoo, J. Kong
{"title":"一种基于经验蚀刻模型的混合PPC方法,用于0.14/spl mu/m DRAM及以上的生产","authors":"Chul-Hong Park, S. Choi, Sang-Uhk Rhie, Dong-Hyun Kim, Jun-Seong Park, Tae-Hwang Jang, Ji-Soong Park, Yoo-Hyon Kim, Moon-Hyun Yoo, J. Kong","doi":"10.1109/ISQED.2002.996717","DOIUrl":null,"url":null,"abstract":"The hybrid PPC (process proximity correction) has been one of the inevitable methods for the sub-wavelength lithography to satisfy the requirements of CD control and yield improvement. In this paper, an effective methodology for hybrid PPC is presented to reduce the data volume and the complexity of patterns and to enhance the accuracy of correction. The selective engine in the flow of hybrid PPC classifies the gate patterns into the areas of model-based and rule-based PPC considering a device performance, a model accuracy, and the extension of the contact overlap margin. Furthermore, the effective method of an empirical model is exploited to compensate the nonlinear etch proximity effect. The statistical method based on the real pattern geometry is also constructed to reflect the process issues in real manufacturing. From this work with the 1 nm correction grid, 22% of the additional reduction in the intra-die CD variation compared with the rule-based PPC has been achieved.","PeriodicalId":20510,"journal":{"name":"Proceedings International Symposium on Quality Electronic Design","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A hybrid PPC method based on the empirical etch model for the 0.14/spl mu/m DRAM generation and beyond\",\"authors\":\"Chul-Hong Park, S. Choi, Sang-Uhk Rhie, Dong-Hyun Kim, Jun-Seong Park, Tae-Hwang Jang, Ji-Soong Park, Yoo-Hyon Kim, Moon-Hyun Yoo, J. Kong\",\"doi\":\"10.1109/ISQED.2002.996717\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The hybrid PPC (process proximity correction) has been one of the inevitable methods for the sub-wavelength lithography to satisfy the requirements of CD control and yield improvement. In this paper, an effective methodology for hybrid PPC is presented to reduce the data volume and the complexity of patterns and to enhance the accuracy of correction. The selective engine in the flow of hybrid PPC classifies the gate patterns into the areas of model-based and rule-based PPC considering a device performance, a model accuracy, and the extension of the contact overlap margin. Furthermore, the effective method of an empirical model is exploited to compensate the nonlinear etch proximity effect. The statistical method based on the real pattern geometry is also constructed to reflect the process issues in real manufacturing. From this work with the 1 nm correction grid, 22% of the additional reduction in the intra-die CD variation compared with the rule-based PPC has been achieved.\",\"PeriodicalId\":20510,\"journal\":{\"name\":\"Proceedings International Symposium on Quality Electronic Design\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings International Symposium on Quality Electronic Design\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISQED.2002.996717\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings International Symposium on Quality Electronic Design","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISQED.2002.996717","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

摘要

混合PPC(过程接近校正)已成为亚波长光刻工艺满足CD控制和良率提高要求的必然方法之一。本文提出了一种有效的混合PPC方法,以减少数据量和模式复杂性,提高校正精度。混合PPC流程中的选择引擎考虑器件性能、模型精度和接触重叠余量的扩展,将栅极模式分为基于模型和基于规则的PPC。此外,利用经验模型的有效方法来补偿非线性腐蚀邻近效应。构建了基于真实模式几何的统计方法来反映真实制造中的过程问题。与基于规则的PPC相比,通过使用1 nm校正网格,实现了芯片内CD变化的22%的额外减少。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A hybrid PPC method based on the empirical etch model for the 0.14/spl mu/m DRAM generation and beyond
The hybrid PPC (process proximity correction) has been one of the inevitable methods for the sub-wavelength lithography to satisfy the requirements of CD control and yield improvement. In this paper, an effective methodology for hybrid PPC is presented to reduce the data volume and the complexity of patterns and to enhance the accuracy of correction. The selective engine in the flow of hybrid PPC classifies the gate patterns into the areas of model-based and rule-based PPC considering a device performance, a model accuracy, and the extension of the contact overlap margin. Furthermore, the effective method of an empirical model is exploited to compensate the nonlinear etch proximity effect. The statistical method based on the real pattern geometry is also constructed to reflect the process issues in real manufacturing. From this work with the 1 nm correction grid, 22% of the additional reduction in the intra-die CD variation compared with the rule-based PPC has been achieved.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信