强无序伊辛磁体的畴生长动力学

D. Chowdhury
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引用次数: 10

摘要

本文用蒙特卡罗模拟方法研究了强无序伊辛磁体的二维畴生长规律。平均线性畴大小随着时间的增加而增大,为R(t) ~ (In t)x。对于我们模拟中使用的所有杂质浓度,指数x的数值被发现小于相应的理论预测,从而表明理论可能成立的渐近状态可能超出了我们观察的时间尺度。然而,与Ikeda等人最近的实验室实验相反,如果给定杂质浓度下的畴大小的蒙特卡罗数据在所有温度下一致地拟合为(int) x的形式,则发现有效指数至少表现出一种“准普适”(温度无关)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Domain growth kinetics in strongly disordered Ising magnets
We investigate the law of domain growth in strongly disordered Ising magnets in two dimensions by Monte Carlo simulation. The average linear domain size is found to grow with time t as R(t) ~ (In t)x. For all the concentrations of the impurities used in our simulations the numerical value of the exponent x is found to be smaller than the corresponding theoretical prediction thereby indicating the possibility that the asymptotic regime, where the theory may hold, lies beyond the time scale of our observation. Nevertheless, in contrast to the recent laboratory experiment of Ikeda et al., the effective exponents are found to exhibit at least a kind of « quasi-universality » (temperature-independence) provided the Monte Carlo data for the domain size at a given impurity concentration are fitted to the form (In t) x over the same time interval consistently at all temperatures.
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