用计算机模拟研究了薄膜的早期生长和退火过程

V. A. Tupik, V. Margolin, Chu Trong Su
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引用次数: 3

摘要

在原子和分子水平上对薄膜生长和退火过程进行早期计算机模拟是研究和提高薄膜或涂层质量的重要步骤之一。在本文中,计算机模拟将在不同的条件下呈现,以显示哪些影响因素及其对所获得的薄膜质量的贡献基于所建立的模型和算法。本文采用的基本数值方法是结合薄膜生长的具体情况,在随机和自组织过程中,我们采用蒙特卡罗方法选择粒子数量和准牛顿方法定义粒子的运动方向。基于正在进行的工艺和沉积(或溅射)材料的类型,建立了各种子模型。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Studying of thin film growth and annealing processes on early stage by computer simulation
Computer simulation of thin film growth and annealing processes on early stage at atomic and molecular level is one of the most important stages to study and increase high quality of obtained thin films or coatings. And in this paper, the computer simulation will be presented at different conditions to show which influence facts and their contribution on the quality of obtained films based on built models and algorithms. Basic numerical methods used in this work is a combination of two methods based on the specifics of thin film growth, in the random and self organization processes, we use Monte-Carlo method with a choice of number of particles and quasi-Newton method with the definition of the direction of particle's motion. Based on the kind of on-going process and deposition (or sputtering) materials, various sub models are built.
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