{"title":"辐照平面像素传感器中电荷倍增和阱辅助隧穿的模拟","authors":"M. Benoit, A. Lounis, N. Dinu","doi":"10.1109/NSSMIC.2010.5873832","DOIUrl":null,"url":null,"abstract":"We present a model for the TCAD simulation of charge multiplication and trap-to-band tunneling to explain the discrepancies between the experimentally observed charge collection in highly irradiated planar pixel sensors and the predictions made using the Hamburg model. DC and transient TCAD simulations of one dimensional n-in-p diodes were performed and reproduce well the observed behavior of diode irradiated to fluences of the order of 1015–16 neq cm−2. The results of the simulations show that impact ionization and de-trapping due to tunneling qualitatively explain the behavior of irradiated sensors observed experimentally.","PeriodicalId":13048,"journal":{"name":"IEEE Nuclear Science Symposuim & Medical Imaging Conference","volume":"4 1","pages":"612-616"},"PeriodicalIF":0.0000,"publicationDate":"2010-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Simulation of charge multiplication and trap-assisted tunneling in irradiated planar pixel sensors\",\"authors\":\"M. Benoit, A. Lounis, N. Dinu\",\"doi\":\"10.1109/NSSMIC.2010.5873832\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a model for the TCAD simulation of charge multiplication and trap-to-band tunneling to explain the discrepancies between the experimentally observed charge collection in highly irradiated planar pixel sensors and the predictions made using the Hamburg model. DC and transient TCAD simulations of one dimensional n-in-p diodes were performed and reproduce well the observed behavior of diode irradiated to fluences of the order of 1015–16 neq cm−2. The results of the simulations show that impact ionization and de-trapping due to tunneling qualitatively explain the behavior of irradiated sensors observed experimentally.\",\"PeriodicalId\":13048,\"journal\":{\"name\":\"IEEE Nuclear Science Symposuim & Medical Imaging Conference\",\"volume\":\"4 1\",\"pages\":\"612-616\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Nuclear Science Symposuim & Medical Imaging Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NSSMIC.2010.5873832\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Nuclear Science Symposuim & Medical Imaging Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NSSMIC.2010.5873832","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Simulation of charge multiplication and trap-assisted tunneling in irradiated planar pixel sensors
We present a model for the TCAD simulation of charge multiplication and trap-to-band tunneling to explain the discrepancies between the experimentally observed charge collection in highly irradiated planar pixel sensors and the predictions made using the Hamburg model. DC and transient TCAD simulations of one dimensional n-in-p diodes were performed and reproduce well the observed behavior of diode irradiated to fluences of the order of 1015–16 neq cm−2. The results of the simulations show that impact ionization and de-trapping due to tunneling qualitatively explain the behavior of irradiated sensors observed experimentally.
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