18.8%高效激光掺杂半导体手指屏印刷硅太阳能电池

Kee Soon Wang, D. Lin, Xinrui An, L. Mai, E. Mitchell, S. Wenham
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引用次数: 3

摘要

高接触电阻阻碍了高效掺激光半导体指硅太阳能电池的实际实现。通过在SCF上镀金属,提出了一种新的SCF电池概念,称为“高级SCF”(AdvSCF)电池,可以解决接触电阻问题。在这项工作中展示的第一个AdvSCF电池中,发现整个电池的镍(Ni)镀层覆盖不均匀,镍空洞主要集中在母线周围。通过确保自旋磷酸掺杂层在整个电池区域均匀厚,特别是在母线处,发现这是可以避免的。在实现均匀镀镍的情况下,在一批6个AdvSCF电池中,平均批次效率达到18.40%,最高达到18.82%。这是在没有对前网格设计或其他电池特性进行任何实验优化的情况下实现的,这意味着有可能实现显着更高的效率水平。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
18.8 % efficient laser-doped semiconductor fingers screen-printed silicon solar cell with light-induced plating
The practical realization of high efficiency laser-doped semiconductor fingers (SCF) silicon solar cell is inhibited by high contact resistance. By plating the SCF with metal, a new SCF cell concept known as the “Advanced SCF” (AdvSCF) cell that can resolve the contact resistance problem is presented. In the first AdvSCF cells demonstrated in this work, the nickel (Ni) plating coverage across the cell was found to be non-uniform with Ni voids mostly concentrated around the busbar. This was found to be avoidable by ensuring that the spin-on phosphoric acid dopant layer was uniformly thick across the whole cell area and especially at the busbar. With uniform Ni plating coverage achieved, in a batch of 6 AdvSCF cells, an average batch efficiency of 18.40 % was achieved with the highest at 18.82 %. This was achieved without any experimental optimization of the front grid design or other cell properties, implying that there is potential to achieve significantly higher efficiency levels.
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